Substrate and epitaxial wafers

Substrate and epitaxial wafers:

 Silicon On Insulator (SOI) wafers

Technologies	Specification
BESOI	Top silicon thickness: 2µm to 100µm [< 20µm, uniformity: +/-0.5µm] BOX thickness range: Up to 3.5µm
SOI + EPI	SOI + EPI top silicon thickness: Up to 15µm, uniformity: +/-0.1µm BOX thickness range: Up to 3µm
SSS	Top silicon thickness: 0.1µm to 1.5µm, uniformity: +/-0.0125µm BOX thickness range: Up to 3µm
SIMBOND	Top silicon thickness: 145nm to 220nm, uniformity: +/-10nm BOX thickness range: Up to 3µm
SIMOX	Top silicon thickness: 100nm to 220nm, uniformity: +/-10nm BOX thickness range: 1200A / 1550A / 3750A

Other substrates / wafers

• Silicon wafers: Our silicon surface have standard Total Thickness Variations (TTV) down to 1 micron. Roughness specs are among the tightest available. We carry hard to find substrates in stock or with a short leadtime, with undoped (Float Zone FZ) or ultra-thinned siliconand Epi ready

 

• III-V substrates single crystal
• Gallium Arsenide (GaAs)
• Gallium Phosphide (GaP)
• Gallium Antimonide (GaSb)
• Indium Phosphide (InP)
• Indium Antimonide (InSb)
• Indium Arsenide (InAs)
• Indium Gallium Arsenide (InGaAs)

 

• II-VI Substrates
• Silicon Carbide (SiC)
• Gallium Nitride (GaN)
• Aluminium Nitride (AlN)

 

• Nitride on Silicon (SiN)
• Stoichiometric Silicon Nitride LPCVD
• Low Stress Nitride on Silicon
• Super Low Stress Nitride on Silicon

 

 

• Thermal Oxide on Silicon
• Wet Thermal Oxide (up to 10 microns thick)
• Dry Thermal Oxide
• Graphene
• Monolayer Graphene on SiO2/Si
• Graphene Oxide (4mg/mL, Water Dispersion 250mL)
• Trilayer Graphene on SiO2/Si
• Reduced Graphene Oxide
• Graphene Oxide Film

 

• Sapphire (Al₂O₃)
• Diameter < 25.4mm
• Diameter: 50.8mm
• Diameter: 76.2mm
• Diameter: 100mm
• Diameter: 150mm
• Diameter: 200mm

 

• Germanium (Ge) Electrical and Optical Grade
• Diameter: 50.8mm
• Diameter: 100mm
• Diameter: 150mm

 

• Indium Tin Oxide (ITO)
• 100mm (ITO)
• 100mm x 100mm (ITO) Glass
• 25mm x 25mm (ITO) Glass
• 50mm (ITO) Glass

 

• Gallium Nitride on Sapphire, Silicon, Silicon Carbide
• Gallium Nitride on Sapphire
• Gallium Nitride on Silicon
• Gallium Nitride on Silicon Carbide

RF epitaxial wafers

Group III-V RF epitaxial wafers:

GaAs	GaN	InP
GaAs pHEMTs GaAs MESFETs & HFETs GaAs PIN Diodes GaAs Schottky Diodes InGaP GaAs HBTs InGaP GaAs BiFETs/BiHEMTs AlGaAs GaAs HBTs AlGaAs GaAs BiFETs / BiHEMTs	GaN HEMTs on SiC* GaN HEMTs on Si GaN PINs on SiC GaN on GaN GaN on Sapphire   *Optional Barrier (InAlN, AlGaN, & Cap Structures	InP HBTs InP HEMTs

 

Group IV Silicon and Germanium epitaxial wafers:

Silicon	Germanium
Silicon Epitaxy on Buried Layers Multilayer Epitaxy High Resistivity Silicon Epitaxy Epitaxial Silicon on Sapphire Silicon on Insulator (SOI) Strained Silicon	Silicon Germanium (SiGe) Selective Silicon, Silicon Germanium or Germanium Epitaxy Germanium Epitaxy on Germanium Germanium Epitaxy on Silicon Germanium Epitaxy on Insulator (GOI)

 

Photonics epitaxial wafers

 

• 3D sensing products:
• 940nm VCSEL (3D sensing)
• 13xx nm VCSEL and EEL (3D sensing / BOLED)
• IQGeVCSEL 150^TM(VCSEL on 150mm Ge)

 

• Infrared imaging products:
• InP Quantum Cascade Laser (QCL)
• GaSb MW-LW infrared photodetector
• InP SWIR and extended wavelength infrared photodetector
• GaAs quantum well photodetector
• GaSb MW infrared emitter

 

• Telecommunications & data communications products:
• InP FP 13xx & 15xx nm (2.5G / 10G) and extended wavelength
• InP DFB 13xx & 15xx nm (2.5G / 10G / 25G) and extended wavelength
• DFB full service with NIL grating
• InP APD 2.5G / 10G / 25G
• InP PD 2.5G / 10G / 25G
• Zinc diffusion
• 850nm VCSEL (10G / 25G / High Power)
• GaAs PD

 

• GaAs & GaN display products:
• GaAs red laser
• GaAs red LED / µLED
• GaN LED / µLED